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RRK-A-5062-1706-91
Balraj Singh
Works50
Citations1,453
h-index19
i10-index27
2-year citedness6.33
Mean FWCI*2.76
Top 1%*0
Top 10%*7
ResearchRank IDRRK-A-5062-1706-91
Observed nameBalraj Singh
ORCID0000-0003-0582-5936
Current / last-known institutionBabasaheb Bhimrao Ambedkar University
Research topicsAdvancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices · 2D Materials and Applications · Silicon Carbide Semiconductor Technologies · Radio Frequency Integrated Circuit Design
Name variantsB. Singh, Balraj Singh
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Profile typeResearcher
Works50
Citations1,453
h-index19
i10-index27
Current / last-known affiliationBabasaheb Bhimrao Ambedkar University
ORCID0000-0003-0582-5936
Name variantsB. Singh, Balraj Singh
Primary research topics
Advancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devices2D Materials and ApplicationsSilicon Carbide Semiconductor TechnologiesRadio Frequency Integrated Circuit Design
Advancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devices2D Materials and ApplicationsSilicon Carbide Semiconductor TechnologiesRadio Frequency Integrated Circuit Design
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Research Output Certificate
At least 10 indexed scholarly works
Citation Impact Certificate
At least 100 indexed citations
h-index Achievement Certificate
h-index of 10 or higher
Sustained Research Output Certificate
At least 50 indexed scholarly outputs
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TOP-CITED OUTPUT
Full profile view · up to 25 leading worksResearch works
2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide StructureArticle · 2017 · 185 citations · FWCI 9.0982 · Full text ↗
A Compact 2-D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors With a SiO2/High- $k$ Stacked Gate-Oxide StructureArticle · 2016 · 162 citations · FWCI 7.3813 · Full text ↗
Extended-Source Double-Gate Tunnel FET With Improved DC and Analog/RF PerformanceArticle · 2020 · 153 citations · FWCI 6.7858 · Full text ↗
Simulation Study of Dielectric Modulated Dual Channel Trench Gate TFET-Based BiosensorArticle · 2020 · 126 citations · FWCI 3.7794 · Full text ↗
2-D Analytical Modeling of Threshold Voltage for Graded-Channel Dual-Material Double-Gate MOSFETsArticle · 2016 · 114 citations · FWCI 7.9965 · Full text ↗
Analytical Modeling of Channel Potential and Threshold Voltage of Double-Gate Junctionless FETs With a Vertical Gaussian-Like Doping ProfileArticle · 2016 · 85 citations · FWCI 5.536 · Full text ↗
2-D Analytical Drain Current Model of Double-Gate Heterojunction TFETs With a SiO2/HfO2 Stacked Gate-Oxide StructureArticle · 2017 · 76 citations · FWCI 4.2079 · Full text ↗
2-D Analytical Threshold Voltage Model for Dielectric Pocket Double-Gate Junctionless FETs by Considering Source/Drain Depletion EffectArticle · 2017 · 49 citations · FWCI 1.9334 · Full text ↗
Dielectric pocket double gate junctionless FET: a new MOS structure with improved subthreshold characteristics for low power VLSI applicationsArticle · 2016 · 49 citations · FWCI 1.5378 · Full text ↗
Analytical Model of Dielectric Modulated Trench Double Gate Junctionless FET for Biosensing ApplicationsArticle · 2021 · 39 citations · FWCI 1.9124 · Full text ↗
Subthreshold Modeling of Tri-Gate Junctionless Transistors With Variable Channel Edges and Substrate Bias EffectsArticle · 2018 · 35 citations · FWCI 2.1051 · Full text ↗
Dual‐channel trench‐gate tunnel FET for improved ON‐current and subthreshold swingArticle · 2019 · 34 citations · FWCI 1.5282 · Full text ↗
A Threshold Voltage Model of Tri-Gate Junctionless Field-Effect Transistors Including Substrate Bias EffectsArticle · 2017 · 32 citations · FWCI 1.7059 · Full text ↗
Analytical modeling of subthreshold characteristics of ion-implanted symmetric double gate junctionless field effect transistorsArticle · 2016 · 28 citations · FWCI 1.5378 · Full text ↗
Static and Quasi-Static Drain Current Modeling of Tri-Gate Junctionless Transistor With Substrate Bias-Induced EffectsArticle · 2019 · 26 citations · FWCI 1.708 · Full text ↗
Ferro-electric stacked gate oxide heterojunction electro-statically doped source/drain double-gate tunnel field effect transistors: A superior structureArticle · 2017 · 25 citations · FWCI 1.7059 · Full text ↗
A new trench double gate junctionless FET: A device for switching and analog/RF applicationsArticle · 2020 · 21 citations · FWCI 1.1166 · Full text ↗
Extended Source Double-Gate Tunnel FET Based Biosensor with Dual Sensing CapabilitiesArticle · 2020 · 20 citations · FWCI 0.6013 · Full text ↗
Subthreshold Characteristic Analysis and Models for Tri-Gate SOI MOSFETs Using Substrate Bias Induced EffectsArticle · 2019 · 19 citations · FWCI 1.0787 · Full text ↗
Controlling the ambipolar current in ultrathin SOI tunnel FETs using the back-bias effectArticle · 2020 · 17 citations · FWCI 0.9449 · Full text ↗
Two-dimensional model for subthreshold current and subthreshold swing of graded-channel dual-material double-gate (GCDMDG) MOSFETsArticle · 2017 · 16 citations · FWCI 0.6824 · Full text ↗
Dual-Channel Junctionless FETs for Improved Analog/RF PerformanceArticle · 2020 · 15 citations · FWCI 0.859 · Full text ↗
Subthreshold Modeling of Graded Channel Double Gate Junctionless FETsArticle · 2020 · 14 citations · FWCI 0.7731 · Full text ↗
Analytical threshold voltage modeling of ion-implanted strained-Si double-material double-gate (DMDG) MOSFETsArticle · 2016 · 14 citations · FWCI 1.2302 · Full text ↗
Vertical Dopingless Dual-Gate Junctionless FET for Digital and RF Analog ApplicationsArticle · 2024 · 12 citations · FWCI 1.2447 · Full text ↗