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RESEARCHER PUBLIC RESEARCH PROFILE● Verified public profile
RRK-A-5038-6351-88
Martin Feneberg
Works215
Citations4,270
h-index36
i10-index100
2-year citedness1.46
Mean FWCI*5.41
Top 1%*1
Top 10%*24
ResearchRank IDRRK-A-5038-6351-88
Observed nameMartin Feneberg
ORCID0000-0003-4253-0061
Current / last-known institutionOtto-von-Guericke-Universität Magdeburg
Research topicsGaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Acoustic Wave Resonator Technologies · ZnO doping and properties · Ga2O3 and related materials
Name variantsFeneberg, Martin, M Feneberg, M. Feneberg, Martin Feneberg
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Profile typeResearcher
Works215
Citations4,270
h-index36
i10-index100
Current / last-known affiliationOtto-von-Guericke-Universität Magdeburg
ORCID0000-0003-4253-0061
Name variantsFeneberg, Martin, M Feneberg, M. Feneberg, Martin Feneberg
Primary research topics
GaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesAcoustic Wave Resonator TechnologiesZnO doping and propertiesGa2O3 and related materials
GaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesAcoustic Wave Resonator TechnologiesZnO doping and propertiesGa2O3 and related materials
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Research Output Certificate
At least 10 indexed scholarly works
Citation Impact Certificate
At least 100 indexed citations
h-index Achievement Certificate
h-index of 10 or higher
Distinguished Researcher Certificate
h-index of 20+ and at least 1,000 indexed citations
Sustained Research Output Certificate
At least 50 indexed scholarly outputs
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TOP-CITED OUTPUT
Full profile view · up to 25 leading worksResearch works
Stacking fault related 3.31−eV luminescence at 130−meV acceptors in zinc oxideArticle · 2008 · 275 citations · FWCI 13.9353 · Full text ↗
Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 1020 cm−3Article · 2014 · 184 citations · FWCI 9.5044 · Full text ↗
High-excitation and high-resolution photoluminescence spectra of bulk AlNArticle · 2010 · 174 citations · FWCI 6.3842 · Full text ↗
Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal SubstratesArticle · 2011 · 133 citations · Open access · FWCI 4.5666 · Full text ↗
Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodesArticle · 2015 · 115 citations · FWCI 5.4136 · Full text ↗
Band gap of corundumlike α−Ga2O3 determined by absorption and ellipsometryArticle · 2017 · 113 citations · FWCI 2.6052 · Full text ↗
Many-electron effects on the dielectric function of cubic In2O3 : Effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shiftArticle · 2016 · 113 citations · FWCI 7.0738 · Full text ↗
Polarization fields of III-nitrides grown in different crystal orientationsArticle · 2007 · 107 citations · Open access · FWCI 4.6865 · Full text ↗
Reliable polarization control of VCSELs through monolithically integrated surface gratings: a comparative theoretical and experimental studyArticle · 2005 · 84 citations · FWCI 11.4023 · Full text ↗
Anisotropic absorption and emission of bulk (11¯00) AlNArticle · 2013 · 78 citations · Open access · FWCI 5.6975 · Full text ↗
Bright semipolar GaInN∕GaN blue light emitting diode on side facets of selectively grown GaN stripesArticle · 2006 · 66 citations · FWCI 8.4941 · Full text ↗
Anisotropic Optical Properties of Metastable (011¯2)α−Ga2O3 Grown by Plasma-Assisted Molecular Beam EpitaxyArticle · 2018 · 65 citations · FWCI 1.4983 · Full text ↗
Optical properties of cubic GaN from 1 to 20 eVArticle · 2012 · 65 citations · FWCI 3.2632 · Full text ↗
Three‐dimensional GaN for semipolar light emittersArticle · 2010 · 65 citations · FWCI 4.2572 · Full text ↗
Piezoelectric fields in GaInN∕GaN quantum wells on different crystal facetsArticle · 2006 · 63 citations · FWCI 6.3706 · Full text ↗
Tackling Disorder in γ‐Ga 2 O 3Article · 2022 · 61 citations · Open access · FWCI 2.7662 · Full text ↗
Optical properties of the organic-inorganic hybrid perovskite CH3NH3PbI3 : Theory and experimentArticle · 2016 · 61 citations · FWCI 3.0756 · Full text ↗
Mahan excitons in degenerate wurtzite InN: Photoluminescence spectroscopy and reflectivity measurementsArticle · 2008 · 57 citations · FWCI 4.1731 · Full text ↗
Optical properties of MgZnO alloys: Excitons and exciton-phonon complexesArticle · 2011 · 54 citations · Open access · FWCI 2.9834 · Full text ↗
Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edgeArticle · 2011 · 54 citations · FWCI 6.0078 · Full text ↗
Optimization of nucleation and buffer layer growth for improved GaN qualityArticle · 2007 · 52 citations · FWCI 4.6865 · Full text ↗
I2 basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence bandArticle · 2011 · 50 citations · FWCI 3.845 · Full text ↗
Au-catalyzed growth processes and luminescence properties of ZnO nanopillars on SiArticle · 2006 · 50 citations · FWCI 4.5847 · Full text ↗
Influence of strain on the band gap energy of wurtzite InNArticle · 2009 · 48 citations · FWCI 4.5862 · Full text ↗
Transition energies and direct-indirect band gap crossing in zinc-blende Al x Ga 1−x NArticle · 2013 · 47 citations · FWCI 3.287 · Full text ↗